Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

By D. Okamoto, H. Yano, T. Hatayama, T. Fuyuki. 2010

138 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/277c27564e7667123078f047dac83ea513bf3330