Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces

By M. Islam, S. Sharma, T. Kamins, R. S. Williams. 2004

167 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2762b31bf4e6ed1dbcde52a2135488935d0ea265

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Wei Dang Lu
2. Ping Xie
3. Charles M. Lieber
4. Peidong Yang
5. Wei Cai
6. K. Kang
7. Gengfeng Zheng
8. F. Patolsky

In Electrical and Electronic Engineering

1. Wei Dang Lu
2. Ping Xie
3. Charles M. Lieber
4. Peidong Yang
5. F. Patolsky
6. Gengfeng Zheng
7. Wei Cai
8. K. Kang

In Materials Chemistry

1. Wei Dang Lu
2. Ping Xie
3. Charles M. Lieber
4. Peidong Yang
5. Wei Cai
6. K. Kang
7. Xiangfeng Duan

Citations in the corpus

• Nanowire Transistor Performance Limits and Applications (2008, background): “nanowire integration can also be realized through direct growth at selected sites, typically from an exposed (111) silicon surface [106], [107] in the case of Si nanowires and on InAs (111)B”