Development of high-strength reaction-sintered silicon carbide

By Shoko Suyama, T. Kameda, Y. Itoh. 2003

153 citations recorded by the source corpus.

Subfields: Ceramics and Composites, Materials Chemistry, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/275e34706f28d5f41818b7a92e9c47fe17fcaeef

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Materials Chemistry

1. Jiwang Yan
2. Tsunemoto Kuriyagawa
3. Zhiyu Zhang

In Mechanical Engineering

1. Jiwang Yan
2. Tsunemoto Kuriyagawa

Citations in the corpus

• Mechanism for material removal in diamond turning of reaction-bonded silicon carbide (2009, background): “However, the infiltrated Si melt cannot react with C completely; therefore, excess Si remains in the body of material as a bonding component [2].”