Origin of giant bulk Rashba splitting: Application to BiTeI
By M. Bahramy, Ryotaro Arita, Naoto Nagaosa. 2011
143 citations recorded by the source corpus.
We theoretically propose the necessary conditions for realization of giant Rashba splitting in bulk systems. In addition to (i) the large atomic spin-orbit interaction in an inversion-asymmetric system, the following two conditions are further required; (ii) a narrow band gap, and (iii) the presence of top valence and bottom conduction bands of symmetrically the same character. As a representative example, using the first principles calculations, the recently discovered giant bulk Rashba splitting system BiTeI is shown to fully fulfill all these three conditions. Of particular importance, by predicting the correct crystal structure of BiTeI, different from what has been believed thus far, the third criterion is demonstrated to be met by a negative crystal field splitting of the top valence bands.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/2610ae2d3f33734fda920eea1228ef7effb01d77
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
Citations in the corpus
- Ferroelectric Rashba semiconductors as a novel class of multifunctional materials (2013, methodology): “We recall that, according to the (k-linear) Rashba effect,[2] the (otherwise spin-degenerate) dispersion of free-like electrons, with momentum k and effective mass m* subject to a potential gradient (i.e. an electric field Ez) and in the presence of SOC, splits into two branches for oppositely spin-”
- Colloquium : Topological band theory (2016, background): “(Ishizaka et al. 2011; Bahramy, Arita, and Nagaosa 2011; Eremeev, Nechaev, et al. 2012) Band structure computations on BiTeCl find oppositely polarized layers of Bi and Te (Chen et al. 2013) so that the system resembles a topological p-n junction.”