Strain-induced gap modification in black phosphorus.
By A. Rodin, A. Carvalho, A. C. Castro Neto. Physical Review Letters, 2014
1,184 citations recorded by the source corpus.
The band structure of single-layer black phosphorus and the effect of strain are predicted using density functional theory and tight-binding models. Having determined the localized orbital composition of the individual bands from first principles, we use the system symmetry to write down the effective low-energy Hamiltonian at the Γ point. From numerical calculations and arguments based on the crystal structure of the material, we show that the deformation in the direction normal to the plane can be used to change the gap size and induce a semiconductor-metal transition.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/25bacb37eda73a7a50d5d997cd058734bb27f3a3
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In Materials Chemistry
- Yong‐Wei Zhang
- Gang Zhang
- Yongqing Cai
- A. Castellanos-Gómez
- Z. Ong
- V. Sorkin
- G. Steele
- Herre S. J. van der Zant
Citations in the corpus
- Isolation and characterization of few-layer black phosphorus (2014, background): “Leaving aside the bandgap discussion, the calculated band structure is similar to others reported in the literature [6, 11–13, 32].”
- Novel effects of strains in graphene and other two dimensional materials (2015, background): “Furthermore, uniaxial stress along the direction perpendicular to the layer can be used to change the gap size in the system, eventually driving this semiconducting material into a 2D metal [295].”
- The rising star of 2D black phosphorus beyond graphene: synthesis, properties and electronic applications (2017, background): “2, it transformed to a square lattice [23].”
- Strain effects on thermoelectric properties of two-dimensional materials (2015, background): “[78] One important character in low dimensional systems is their strong exciton binding due to the weak screening compared to their bulk counterpart.”
- Superior mechanical flexibility of phosphorene and few-layer black phosphorus (2014, background): “In addition, this material shows a finite direct band gap at the Γ point of Brillouin zone [1, 2, 5-8] (in contrast to the vanishing gap in graphene), which opens doors for additional applications in optoelectronics.”