Lead iodide perovskite light-emitting field-effect transistor

By X. Chin, D. Cortecchia, Jun Yin, A. Bruno, C. Soci. Nature Communications, 2015

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Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature. Hybrid organic–inorganic perovskites have shown great potential for use in optoelectronic applications. Here, the authors create solution-processed lead iodide perovskite light-emitting field-effect transistors and demonstrate both ambipolar behaviour and gate-assisted electroluminescence.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/2598ab93cc4c6e14795689abcb0905d5c6841932