Electrical control of optical properties of monolayer MoS2
By A. Newaz, Dhiraj Prasai, Jed I. Ziegler, Dave Caudel, S. Robinson, Richard F Haglund, Kirill I. Bolotin. 2012
204 citations recorded by the source corpus.
Abstract We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS2) configured in field effect transistor geometry. We observe a hundredfold increase in photoluminescence intensity and an increase in absorption at ∼660 nm in these devices when an external gate voltage is decreased from +50 to −50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS2 devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer devices are related to the interaction of the excitons in MoS2 with charge carriers.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/249828f58979055aba4c5172ebee892bdea629ef
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In Electrical and Electronic Engineering
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In Materials Chemistry
Citations in the corpus
- Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons (2013, background): “In conclusion, anion vacancies as point defects drastically modify the optical properties of monolayer TMDs in such a way that: (1) the overall integrated PL intensity is enhanced, and (2) a new, defectrelated peak is observed below the bandgap.”
- Few-layer MoS 2 saturable absorbers for short-pulse laser technology: current status and future perspectives [Invited] (2015, background): “Distinct from the semimetallic nature of graphene, the direct gap semiconducting properties of monolayer MoS2, which efficiently absorbs and emits photons via transitions at the fundamental energy gap [23], supports opportunities for the optoelectronic and photonic application of 2D materials, not p”
- Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. (2012, background): “Doping is expected to play a major role in suppressing PL in monolayers.(44-45) Since the materials studied here are unintentionally doped at different concentrations, we suspect that the observed differences mainly arise from doping.”