Fermi velocity engineering in graphene by substrate modification
By C. Hwang, D. Siegel, S. Mo, W. Regan, A. Ismach, Yuegang Zhang, A. Zettl, Alessandra Lanzara. Scientific Reports, 2012
410 citations recorded by the source corpus.
The Fermi velocity, vF, is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device applications, graphene is viewed as a prototypical system for engineering vF. Indeed, several efforts have succeeded in modifying vF by varying charge carrier concentration, n. Here we present a powerful but simple new way to engineer vF while holding n constant. We find that when the environment embedding graphene is modified, the vF of graphene is (i) inversely proportional to its dielectric constant, reaching vF ~ 2.5×106 m/s, the highest value for graphene on any substrate studied so far and (ii) clearly distinguished from an ordinary Fermi liquid. The method demonstrated here provides a new route toward Fermi velocity engineering in a variety of two-dimensional electron systems including topological insulators.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/247f3535eaf543976c99aabfc2222802244cb7d6
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In Atomic and Molecular Physics, and Optics
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Citations in the corpus
- Angle-resolved photoemission studies of quantum materials (2020, positive): “Here, the Dirac cone can be renormalized differently from what one would expect from a mode-coupling induced band renormalization (Hwang et al., 2012), or even gapped out (Zhou et al., 2007a).”
- Colloquium: Graphene spectroscopy (2014, background): “13See Carbotte et al. (2012); Grushin et al. (2009); Hwang et al. (2012b); Peres et al. (2010); and Principi et al. (2013a).”