Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response†
By W. Feng, Jingyi Wu, Xiaoli Li, Wei Zheng, Xin Zhou, Kai Xiao, W. Cao, Bin Yang, J. Idrobo, L. Basile and 3 more. 2015
180 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/2435ce4973b3e78b87a32790b8598755cf6edda3
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- The role of traps in the photocurrent generation mechanism in thin InSe photodetectors (2020, background): “3 eV in bulk that becomes larger than 3 eV for an InSe single-layer makes this material interesting for broadband photodetection from the near-infrared to the near ultraviolet region of the electromagnetic spectrum.(30-40) Various photodetectors based on thin InSe flakes (as the active channel part)”