Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

By Q. Dai, M. Schubert, Min-ho Kim, Jong Kyu Kim, E. Schubert, D. Koleske, M. Crawford, S. Lee, A. Fischer, G. Thaler and 1 more. 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009

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Room-temperature photoluminescence measurements are performed on GaInN/GaN multiple quantum wells grown on GaN-on-sapphire templates with different threading-dislocation densities. The internal quantum efficiencies as a function of carrier concentration and the non-radiative coefficients are obtained.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/23cdfa12e66b0d959e509816211ca700e5e6cea5