Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry
By T. Nagashima, M. Hangyo. 2001
154 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Ecology, Evolution, Behavior and Systematics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/23c6c6c18f8cf684e5d9f979d9f20c570e233ed6
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In Atomic and Molecular Physics, and Optics
- Tadao Nagatsuma
- Willie J Padilla
- T. Kampfrath
- Koichiro Tanaka
- Miriam S. Vitiello
- D. Mihailovic
- H. Joyce
- J. Kono
In Electrical and Electronic Engineering
- Tadao Nagatsuma
- Willie J Padilla
- Koichiro Tanaka
- T. Kampfrath
- Miriam S. Vitiello
- Masayoshi Tonouchi
- H. Joyce
- J. Boland
Citations in the corpus
- The 2023 terahertz science and technology roadmap (2023, background): “In addition, measurement of the full polarization state allows the determination of the complex optical properties of non-transmissive materials by ellipsometry [36].”