Influence of Defects and Synthesis Conditions on the Photovoltaic Performance of Perovskite Semiconductor CsSnI3

By P. Xu, Shiyou Chen, Hongjun Xiang, X. Gong, Suhuai Wei. 2014

286 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/23018cfd2e3a205e2f17c3d6acc5757b24a488ae

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Antonio Guerrero
2. Richard I. Walton
3. Hong-xia Wang
4. Juan Bisquert
5. K. P. Marshall
6. R. Hatton
7. G. Garcia‐Belmonte
8. I. Mora‐Seró

In Materials Chemistry

1. Hong-xia Wang
2. Juan Bisquert
3. G. Garcia‐Belmonte
4. I. Mora‐Seró
5. L. Peter

Citations in the corpus

• Guanidinium thiocyanate selective Ostwald ripening induced large grain for high performance perovskite solar cells (2017, background): “recombination, severely reducing the charge carrier life time, and thus the overall photovoltaic device performance [14-16].”
• Enhanced stability and efficiency in hole-transport-layer-free CsSnI3 perovskite photovoltaics (2016, background): “The low energy of formation of tin array vacancies in tin halide perovskites has also proved problematic, making it difficult to achieve high device fill-factor (FF) due to high rates of defect mediated charge carrier recombination.(7,8) Similar to the case of lead perovskites, a further challenge h”