Very large magnetoresistance and coherent switching in half-metallic manganite tunnel junctions
By M. Jo, N. Mathur, N. K. Todd, M. Blamire. 2000
135 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/22e98eb96139000892a3c50bde66cca6bfa470e9
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In Condensed Matter Physics
- M. Katsnelson
- A. Lichtenstein
- V. Irkhin
- R. D. Groot
- Manuel Bibes
- L. Chioncel
- Stuart S. P. Parkin
- A. Barthélémy
In Electronic, Optical and Magnetic Materials
- Stuart S. P. Parkin
- A. Barthélémy
- Manuel Bibes
- A. Lichtenstein
- V. Irkhin
- R. D. Groot
- M. Katsnelson
- L. Chioncel
In Materials Chemistry
- Stuart S. P. Parkin
- A. Barthélémy
- Manuel Bibes
- A. Lichtenstein
- M. Katsnelson
- V. Irkhin
- R. D. Groot
- L. Chioncel
Citations in the corpus
- Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers (2004, background): “Thus, the higher the tunnelling spin polarization (TSP), the higher the TMR, so that there has been considerable interest in nominally half-metallic ferromagnetic electrodes, such as the manganite perovskite”
- Oxide Spintronics (2007, background): “Several explanations have been invoked to explain the difference between T ∗ and TC : defects in the tunnel barrier causing spin flips [45], [46] and nonoptimal magnetic properties at manganite/barrier interfaces (either due to oxygen deficiency [33], phase separation [42], etc.”
- Half-metallic ferromagnets: From band structure to many-body effects (2007, background): “Also, tunnelling experiments initially casted doubt on the half-metallic properties (Jo et al., 2000a,b; Viret et al., 1997).”