Two-dimensional surface state in the quantum limit of a topological insulator

By J. Analytis, R. McDonald, S. Riggs, J. Chu, G. Boebinger, Ian R. Fisher. 2010

474 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/22e29683ed6c8b63b86aeb53924db79f0b1bc0af

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Ashvin Vishwanath
2. Hsin Lin
3. Arun Bansil
4. Tanmoy Das
5. N. P. Armitage
6. E. Mele
7. Yi Cui
8. Sayeef Salahuddin

In Materials Chemistry

1. Ashvin Vishwanath
2. Hsin Lin
3. Arun Bansil
4. Tanmoy Das
5. N. P. Armitage
6. Mauricio Terrones
7. J. Shan
8. E. Mele

Citations in the corpus

• Colloquium : Topological band theory (2016, background): “…tunes EF to the Dirac point and fully removes the bulk conducting band from EF, (Hsieh, Xia, Qian, Wray, Dil, et al. 2009; Hor et al. 2009)while Sb doping in Bi2Te3 (Kong et al. 2011; Zhang, Chang, et al. 2011) and Bi2Se3 (Analytis et al. 2010) has been shown to control the carrier density and EF.”
• Weyl and Dirac semimetals in three-dimensional solids (2017, background): “This is unlike the case of topological insulators, where after sufficiently insulating bulk materials were grown, definitive surface transport signatures soon followed (Analytis et al., 2010; Checkelsky et al., 2011; Wu et al., 2016; Xu et al., 2014).”
• Progress, challenges, and opportunities in two-dimensional materials beyond graphene. (2013, background): “Imperfections in the bulk crystal structure create vast amounts of additional electrons, overwhelming the surface electron transport.(253,254) Therefore, the TIs need to be engineered to reduce the bulk contribution in order to achieve transport dominated by surface electrons.”