Magnetism in hafnium dioxide
By J. Coey, M. Venkatesan, P. Stamenov, C. Fitzgerald, Lucio Strazzabosco Dorneles. 2005
380 citations recorded by the source corpus.
Thin films of HfO2 produced by pulsed-laser deposition on sapphire, yttria-stabilized zirconia, or silicon substrates show ferromagnetic magnetization curves with little hysteresis and extrapolated Curie temperatures far in excess of 400 K. The moment does not scale with film thickness, but in terms of substrate area it is typically in the range 150–400 B nm −2. The magnetization exhibits a remarkable anisotropy, which depends on texture and substrate orientation. Pure HfO2 powder develops a weak magnetic moment on heating in vacuum, which is eliminated on annealing in oxygen. Lattice defects are the likely source of the magnetism.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/22bbf420bbbe36e0d1f67ba309a9b8d2e08028b7
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Citations in the corpus
- Trapping, self-trapping and the polaron family (2007, result): “MgO:V 0 centres and possible ferromagnetism in simple oxides Measurements suggesting ferromagnetism in HfO2 (Coey et al 2005) have been controversial (Abraham et al 2005, Ramachandra Rao et al 1999, Hoa Hong et al 2006), though given some support from theory (Pemmajaru and Sanvito 2005).”
- Structure and magnetism of cobalt-doped ZnO thin films (2008, background): “These defects may rely on the presence of the transition metal dopants by the formation of complexes that mediate FM ordering, or defects alone may be enough to cause ferromagnetism, such as that reported for undoped HfO2 [41].”