Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination
By J. Zaumseil, K. Baldwin, John A. Rogers. 2003
317 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/227a258c56d7e5ad21cc937ec9d69b2b3259ee62
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In Electrical and Electronic Engineering
Citations in the corpus
- 42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT (2008, background): “From the same point of view, IGZO thickness effect can also be connected with parasitic resistance (Rp) that includes not only S/D interface resistance but also bulk effect [6].”