Nucleation and propagation of dislocations in nanocrystalline fcc metals

By H. Swygenhoven, P. Derlet, A. Frøseth. 2006

396 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/2215014a9c4c89a18c0a7d313a5f805799836f28

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. David L. McDowell
2. Douglas E. Spearot
3. Mark A. Tschopp

In Materials Chemistry

1. David L. McDowell
2. Mark A. Tschopp
3. Douglas E. Spearot
4. David Rodney
5. F. Willaime
6. J. Friedel
7. M. Kleman
8. E. Clouet

In Mechanical Engineering

1. David L. McDowell
2. Mark A. Tschopp
3. Douglas E. Spearot
4. David Rodney
5. F. Willaime
6. J. Friedel
7. M. Kleman
8. E. Clouet

Citations in the corpus

• Atomistic simulations of homogeneous dislocation nucleation in single crystal copper (2007, background): “Van Swygenhoven and coworkers also used atomistic simulations to show that grain boundary ledges and triple junctions play an important role in dislocation nucleation and propagation in nanocrystalline materials (cf [6]).”