Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator

By S. Scheinert, G. Paasch, M. Schrödner, H. Roth, S. Sensfuss, T. Doll. 2002

176 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/20bb88a62bcf3c97c8cb776fbc1211d73cbbe24f

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1. M. Manenti
2. P. Lugli
3. A. Di Carlo
4. M. Berliocchi
5. K. Lmimouni
6. C. Dufour

Citations in the corpus

• Effects of grain boundaries, field-dependent mobility, and interface trap States on the electrical Characteristics of pentacene TFT (2004, methodology): “A 2-D model has been used to describe the influence of the traps in the device characteristics [7], [8], the behavior of top contact OTFTs [9], [10] and the relation between channel formation and the nature of contacts [11].”