Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient
By C. Platzer‐Björkman, T. Törndahl, D. Abou‐Ras, J. Malmström, J. Kessler, L. Stolt. 2006
266 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/1ff6b05fbc1f989113256013552987f1f5934bd1
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Nicolas Barreau
- D. Hariskos
- C. Platzer‐Björkman
- C. Guillén
- J. Herrero
- A. Tiwari
- Tonio Buonassisi
- S. Siebentritt
In Materials Chemistry
- D. Hariskos
- D. Abou‐Ras
- C. Platzer‐Björkman
- C. Guillén
- J. Herrero
- A. Tiwari
- Nicolas Barreau
- Tonio Buonassisi
Citations in the corpus
- Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments (2010, background): “[99] determined the Cu(In,Ga)Se2/ALD-Zn(S,O) interface composition and band structure.”
- Co‐optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells (2015, background): “Zn(O,S) allows simple tuning of the conduction band offset (CBO) at the p-n junction interface by optimizing the oxygen and sulfur contents of Zn(O,S) [9-11], which can be easily done with atomic layer deposition (ALD) by altering the number of pulses for each precursor [7,12,13].”