Theory of spin torques and giant magnetoresistance in antiferromagnetic metals
By A. S. Nunez, R. Duine, P. Haney, Allan H. MacDonald. 2006
201 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/1fbbe87faa8457b761b6439901d8579fe34b35d8
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In Atomic and Molecular Physics, and Optics
- Pietro Gambardella
- T. Jungwirth
- J. Sinova
- A. Manchon
- I. Miron
- Y. Tserkovnyak
- Kevin Garello
- A. Brataas
In Condensed Matter Physics
- Pietro Gambardella
- T. Jungwirth
- J. Sinova
- I. Miron
- Y. Tserkovnyak
- A. Brataas
- Kevin Garello
- A. Manchon
In Materials Chemistry
Citations in the corpus
- Interface-Induced Phenomena in Magnetism (2016, unknown): “On the other hand, it has been proposed [Nuñez et al., 2006; Gomonay and Loktev, 2010; Železný et al., 2014] that current-induced magnetic torques of the form dM/dt ∼M × (M×p̂) where p̂ is the direction of the electrically-injected carrier polarization, allow for a large angle reorientation of the a”
- Antiferromagnetic spintronics (2016, background): “According to the original predictions (Núñez et al., 2006), the resistance of an antiferromagnetic spin valve AF/N/AF should depend on the relative orientation of magnetic order parameters in the two antiferromagnets.”
- Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, background): “Since the first proposal of STT in AFs (MacDonald and Tsoi, 2011; Núñez et al., 2006), several configurations have been theoretically investigated to enable large spin torque efficiency.”
- Spin insulatronics (2020, background): “Early theories of antiferromagnetic metals as active spintronic elements [28, 29] inspired their validation as memory devices [30, 31].”