Reaction–diffusion in high-k dielectrics on Si

By R. D. Almeida, I. Baumvol. 2003

134 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/1f4e8dad964a637b2e62874911e9af300eded49d

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1. Ralf Metzler
2. Joseph Klafter
3. Mark M. Meerschaert
4. Charles Tadjeran
5. Yuri Luchko
6. Anatoly N. Kochubei
7. Enrico Scalas
8. Om Prakash Agrawal

Citations in the corpus

• The restaurant at the end of the random walk: recent developments in the description of anomalous transport by fractional dynamics (2004, background): “…found as the mechanism in the growth of surface molybdenum oxide patterns (Lugomer et al 2002), and similarly the electron transfer kinetics in PEDOT8 films (Randriamahazaka et al 2002) and atomic transport and chemical reaction processes in high-k dielectric films (de Almeida and Baumvol 2003).”
• Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics (2009, unknown): “2 , 3 , 4 , 5 , 6 For example, de Almeida and Baumvol 3 analyzed in detail the reaction and diffusive properties of dielectric/gate and dielectric/channel interfaces.”