Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

By V. Cimalla, J. Pezoldt, Oliver Ambacher. 2007

348 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/1efa5dca2d6549a24e4839ba7f1845b234ac62e7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Nam-Trung Nguyen

In Electrical and Electronic Engineering

1. Hoang‐Phuong Phan
2. Sima Dimitrijev
3. Dzung Viet Dao
4. K. Nakamura
5. Nam-Trung Nguyen
6. Jeff Morse

Citations in the corpus

• Gallium Nitride as an Electromechanical Material (2014, methodology): “3 shall be shifted by −1 GPa.”
• X-ray diffraction of III-nitrides (2009, background): “i Average value from all references reviewed in [90].”
• The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review (2015, background): “Table I lists the properties of the most common single crystalline SiC poly-types (3C-SiC, 4H-SiC, and 6H-SiC) in comparison to Si, the conventional MEMS material, and other wide energy gap materials such as diamond and GaN [20], [31], [32].”