Rashba spin splitting in inversion layers onp-type bulk InAs
By T. Matsuyama, R. Kürsten, C. Meissner, U. Merkt. 2000
147 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/1ea84faf47278bfa728667cfab230132cdbcffc0
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
Citations in the corpus
- Spin dynamics in semiconductors (2010, background): “The experimental results indicated that the largest Rashba parameter αR can be 30×10−12 eV·m [161, 163] or even 40 ×10−12 eV·m [165] for InAs and 14×10−12 eV·m for GaSb [180] quantum wells, while the smallest Rashba para meter can be negligible [178, 183].”
- Artificial gauge fields in materials and engineered systems (2017, unknown): “where the weights α and β can be independently measured [322,323] and their ratio can be tuned using additional gate control over the electron confinement [321,324] and density [325,326].”