Black phosphorus field-effect transistors.

By Likai Li, Yijun Yu, G. Ye, Q. Ge, Xuedong Ou, Hua-Yao Wu, D. Feng, Xian Hui Chen, Yuanbo Zhang. Nature Nanotechnology, 2014

7,414 citations recorded by the source corpus.

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1e947c571541ecf66e7c8b691b172942d6f99d4b

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Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles (2020, background): “semiconductors, such as the transition metal dichalcogenides [29,30], indium selenide [31] and phosphorene [32,33].”