Comparison of TiO2 and other dielectric coatings for buried‐contact solar cells: a review
By B. Richards. 2004
191 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/1e043ff7bf0b790090e10a5af40e13e3e9a319f5
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
- A. Shalav
- B. Richards
- S. De Wolf
- Martin A. Green
- K. Weber
- Xinbo Yang
- Ewan D. Dunlop
- Yoshihiro Hishikawa
Citations in the corpus
- Enhancing the Near-Infrared Spectral Response of Silicon Optoelectronic Devices via Up-Conversion (2007, background): “First, the front surface SiO2 antireflection (AR) coating could be replaced by a plasma-enhanced chemical vapor deposition silicon nitride (a−SiNx : H)/SiO2 stack as is used in high-efficiency solar cells [23].”
- Luminescent layers for enhanced silicon solar cell performance: Up-conversion (2006, background): “Of these materials, crystalline ZnSe is commonly used for the fabrication of high refractive index optics, while TiO2 has been commonly used as an AR coating [50].”
- Industrially feasible, dopant‐free, carrier‐selective contacts for high‐efficiency silicon solar cells (2017, background): “Due to the excellent optical and stability properties, TiO2 thin films have been commonly investigated as antireflection coating in the PV industry for screen-printed solar cells before PECVD-SiNx was developed [38].”