Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition

By D. Ruzmetov, D. Heiman, B. Claflin, V. Narayanamurti, Shriram Ramanathan. 2009

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Temperature-dependent magnetotransport measurements in magnetic fields of up to 12 T were performed on thin-film vanadium dioxide (VO 2 ) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1 cm 2 /V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/1d8276db95f826b7e892984ab9aab48d43fb7c52