Intrinsic hole mobility and trapping in a regioregular poly(thiophene)
By Alberto Salleo, T. Chen, A. Voelkel, Y. Wu, P. Liu, B. Ong, Robert A. Street. 2004
212 citations recorded by the source corpus.
The transport properties of high-performance thin-film transistors (TFT) made with a regio-regular poly(thiophene) semiconductor (PQT-12) are reported. The room-temperature field-effect mobility of the devices varied between 0.004 cm2/V s and 0.1 cm2/V s and was controlled through thermal processing of the material, which modified the structural order. The transport properties of TFTs were studied as a function of temperature. The field-effect mobility is thermally activated in all films at T<200 K and the activation energy depends on the charge density in the channel. The experimental data is compared to theoretical models for transport, and we argue that a model based on the existence of a mobility edge and an exponential distribution of traps provides the best interpretation of the data. The differences in room-temperature mobility are attributed to different widths of the shallow localized state distribution at the edge of the valence band due to structural disorder in the film. The free carrier mobility of the mobile states in the ordered regions of the film is the same in all structural modifications and is estimated to be between 1 and 4 cm2/V s.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/1d6320aca3ba6bbe9bbca760f6b660e601cdb0dc
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In Biomedical Engineering
In Electrical and Electronic Engineering
- S. Ludwigs
- Iain McCulloch
- M. McGehee
- R. J. Kline
- M. Toney
- M. Heeney
- Michael L. Chabinyc
- Alberto Salleo
Citations in the corpus
- Morphology and Charge Transport in Conjugated Polymers (2006, methodology): “have used the mobility edge model to describe these films.([38]) The mobility edge model is similar to the multiple trap and release model used to describe amorphous silicon and crystalline small molecule organics.”
- Highly oriented crystals at the buried interface in polythiophene thin-film transistors (2006, unknown): “and poly[5,58-bis(3-alkyl-2-thienyl)-2,28-bithiophene)] (PQT”
- P3HT Revisited – From Molecular Scale to Solar Cell Devices (2014, background): “In solution, P3HT exhibits one broad absorption peak without structural features, which is associated with isolated chains in a coiled conformation [38].”