Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

By M. Esposto, S. Krishnamoorthy, D. Nath, S. Bajaj, Ting‐Hsiang Hung, S. Rajan. 2011

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We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60 × 1012 cm−2 at the Al2O3/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/1c6abdee30f4d200f39ae5f0d7ba81b1b9579105