Point defect modeling in materials: coupling ab initio and elasticity approaches

By C. Varvenne, F. Bruneval, M. Marinica, E. Clouet. 2013

165 citations recorded by the source corpus.

Modeling point defects at an atomic scale requires careful treatment of the long-range atomic relaxations. This elastic field can strongly affect point defect properties calculated in atomistic simulations because of the finite size of the system under study. This is an important restriction for ab initio methods which are limited to a few hundred atoms. We propose an original approach coupling ab initio calculations and linear elasticity theory to obtain the properties of an isolated point defect for reduced supercell sizes. The reliability and benefit of our approach are demonstrated for three problematic cases: the self-interstitial in zirconium, clusters of self-interstitials in iron, and the neutral vacancy in silicon.

Subfields: Atomic and Molecular Physics, and Optics, Computational Mechanics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1b91d7042a2e4201292025afc3475d88074709d5