Enhancement of Ferroelectricity in Strained BaTiO3 Thin Films

By Kyoung Jin Choi, M. Biegalski, Yulan Li, A. Sharan, Jürgen Schubert, R. Uecker, P. Reiche, Y. Chen, X. Pan, Venkatraman Gopalan and 3 more. Science, 2004

1,771 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1b81452fe2e22473564afc72fcb29b10ebe8bb55

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In Biomedical Engineering

1. K. Rabe
2. J. Scott
3. M. Dawber
4. J. Triscone
5. Ramamoorthy Ramesh
6. Darrell Schlom
7. C. Eom
8. Long-qing Chen

In Materials Chemistry

1. Ramamoorthy Ramesh
2. K. Rabe
3. J. Scott
4. Darrell Schlom
5. Long-qing Chen
6. J. Triscone
7. N. Spaldin
8. M. Dawber

Citations in the corpus

• Modern Physics of Ferroelectrics: Essential Background (2007, methodology): “For SrTiO3, epitaxial strain transforms the bulk paraelectric phase into a ferroelectric [35, 36 ].”
• Physics of thin-film ferroelectric oxides (2005, background): “With lowtemperature growth techniques, the formation of misfit dislocations is kinetically inhibited and coherent films can be grown to thicknesses of two to three times the critical thickness (Choi et al., 2004).”
• Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics (2016, background): “These values of P◦ and Ec are in the same range as those of perovskite ferroelectrics such as BaTiO3 [14], Pb(Zr1−xTix )O3 [15], as well as Hf- and Zr-based binary oxide ferroelectrics [16].”