Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

By M. Schubert, S. Chhajed, Jong Kyu Kim, E. Fred Schubert, D. Koleske, M. Crawford, S. Lee, A. Fischer, G. Thaler, M. Banas. 2007

389 citations recorded by the source corpus.

Measurements of light-output power versus current are performed for GaInN∕GaN light-emitting diodes grown on GaN-on-sapphire templates with different threading dislocation densities. Low-defect-density devices exhibit a pronounced efficiency peak followed by droop as current increases, whereas high-defect-density devices show low peak efficiencies and little droop. The experimental data are analyzed with a rate equation model to explain this effect. Analysis reveals that dislocations do not strongly impact high-current performance; instead they contribute to increased nonradiative recombination at lower currents and a suppression of peak efficiency. The characteristics of the dominant recombination mechanism at high currents are consistent with processes involving carrier leakage.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1aeff204154f835c5791183a172750bfa14f4bbe

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Citations in the corpus

• Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “2It is claimed in [68] that the high threading dislocation density in the epitaxial structure is more related to the limitation of peak efficiency at lower level of current injection rather than to efficiency droop.”