Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

By Seung Ryul Lee, Young-Bae Kim, Man Chang, K. Kim, Chang Bum Lee, J. Hur, G. Park, Dongsoo Lee, Myoung-Jae Lee, C. J. Kim and 3 more. Symposium on VLSI Technology, 2012

154 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1aad5bcae47ab470fd1554ce999a8d055b053477