Tuning the Electronic and Magnetic Properties of MoS2 Nanoribbons by Strain Engineering

By H. Pan, Yong-Wei Zhang. 2012

221 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/19cc7d70c6621a8db6d0e4a8155745e1dcf333ea

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In Materials Chemistry

1. Yong‐Wei Zhang
2. Gang Zhang
3. Yongqing Cai
4. A. Castellanos-Gómez
5. Z. Ong
6. V. Sorkin
7. G. Steele
8. Herre S. J. van der Zant

Citations in the corpus

• Mechanics of freely‐suspended ultrathin layered materials (2014, background): “ith the applied strain. (The data has been adapted from [114], [115] and [116]) Another aspect of the 2D materials research that is attracting a great deal of attention recently is strain engineering [117, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128]. Although most of the strain engineerin”
• Recent Advances in the Study of Phosphorene and its Nanostructures (2017, background): “Similarly, in ZZ MoS2 nanoribbons, edge bands cross the Fermi level and close the band gap.(250) In the case of phosphorene nanoribbons with ZZ edges, two additional bands (a-”
• A Comparative Study of Electronic Properties of Bulk MoS2 and Its Monolayer Using DFT Technique: Application of Mechanical Strain on MoS2 Monolayer (2014, background): “It has been suggested that strain engineering of the band structure of MoS2 could be used to increase carrier mobility of MoS2, to create tunable photonic devices and solar cells [23] and even to control the magnetic properties of MoS2 [19] [20].”