A wide-bandgap metal–semiconductor–metal nanostructure made entirely from graphene

By J. Hicks, A. Tejeda, A. Taleb-Ibrahimi, M. Nevius, Feng Wang, K. Shepperd, J. Palmer, F. Bertran, P. Fèvre, J. Kunc and 3 more. Nature Physics, 2012

190 citations recorded by the source corpus.

Present methods for producing semiconducting–metallic graphene networks suffer from stringent lithographic demands, process-induced disorder in the graphene, and scalability issues. Here we demonstrate a one-dimensional metallic–semiconducting–metallic junction made entirely from graphene. Our technique takes advantage of the inherent, atomically ordered, substrate–graphene interaction when graphene is grown on SiC, in this case patterned SiC steps, and does not rely on chemical functionalization or finite-size patterning. This scalable bottom-up approach allows us to produce a semiconducting graphene strip whose width is precisely defined to within a few graphene lattice constants, a level of precision beyond modern lithographic limits, and which is robust enough that there is little variation in the electronic band structure across thousands of ribbons. The semiconducting graphene has a topographically defined few-nanometre-wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. The electronic properties of graphene are spatially controlled from metallic to semiconducting by patterning steps into the underlying silicon carbide substrate. This bottom-up approach could be the basis for integrated graphene electronics.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/19b53c9b75e2c48a9c29cb23eae4460cbedd6bc3

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Citations in the corpus

Production and processing of graphene and related materials (2020, background): “N,N,N,N’-tetramethyluronium hexafluorophosphate HBC: Hexabenzocoronene HBC-Br: 2-Bromo-11-(1’-[4’-(S-Acetylthiomethyl)phenyl]acetyl)-5,8,14,17-tetra(3’,7’-dimethyloctyl)hexa-peri-hexabenzocoronene HBC-CN: 2-Cyano-11-(1’-[4’-(S-Acetylthiomethyl)phenyl]acetyl)-5,8,14,17-tetra(3’,7’-dimethyloctyl)hexa-”
Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, methodology): “Epitaxial graphene growth on SiC by the sublimation method is a promising technique for quality graphene growth and shows interesting physical characteristics such as ballistic transport in nanoribbons [32], high frequency tran istors [13,33], qu n um Hall resistance stan ard for metrology [15], and”