Cd-free buffer layer materials on Cu2ZnSn(SxSe1−x)4: Band alignments with ZnO, ZnS, and In2S3

By D. Barkhouse, R. Haight, N. Sakai, H. Hiroi, H. Sugimoto, David B. Mitzi. 2012

199 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/199aab2c89f4a375d96241fb9a12bd7c79e02b00

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. X. Hao
2. Martin A. Green
3. Fang-yang Liu
4. H. Cui
5. Yu Feng
6. G. Conibeer
7. Xiaolei Liu
8. David B. Mitzi

In Materials Chemistry

1. Martin A. Green
2. X. Hao
3. Fang-yang Liu
4. H. Cui
5. Yu Feng
6. G. Conibeer
7. Xiaolei Liu
8. David B. Mitzi

Citations in the corpus

• The current status and future prospects of kesterite solar cells: a brief review (2016, background): “A CZTSSe solar cell with such an In2S3 buffer layer achieved an efficiency of 7.19%, which was comparable to the efficiency of 7.75% made from the analogous CdS buffer layer [120].”