Monolithic VCSEL with InGaAsN active region emitting at 1.28 µm and CW output power exceeding 500 µW at room temperature

By G. Steinle, H. Riechert, A. Egorov. 2001

137 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1906dd5ea42f96f899802e0af0431ccd640880d9