Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects

By M. Otrokov, T. Menshchikova, M. Vergniory, I. P. Rusinov, A. Vyazovskaya, Y. Koroteev, G. Bihlmayer, A. Ernst, P. Echenique, A. Arnau and 1 more. 2017

236 citations recorded by the source corpus.

An interplay of spin–orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Here, we propose a novel material platform with unique combination of properties making it perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator (TI) surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the TI. Following this proposal we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/187baf1952c95ed8a30c46884987c201e8a2cf7c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Chaoxing Liu
2. Allan H. MacDonald
3. Cui-Zu Chang
4. Shoucheng Zhang
5. Yong Xu
6. K. He
7. Wenhui Duan
8. Jiaheng Li

In Condensed Matter Physics

1. Allan H. MacDonald
2. Chaoxing Liu
3. Wenhui Duan
4. Cui-Zu Chang
5. Yong Xu
6. K. He
7. Jennifer Cano
8. Shoucheng Zhang

In Materials Chemistry

1. Chaoxing Liu
2. Allan H. MacDonald
3. Cui-Zu Chang
4. Shoucheng Zhang
5. Yong Xu
6. K. He
7. Wenhui Duan
8. Kornelius Nielsch

Citations in the corpus

• Chemical Aspects of the Candidate Antiferromagnetic Topological Insulator MnBi2Te4 (2018, background): “some disadvantages of this approach([18]) and has introduced a new principle coined “magnetic extension”.([19,20]) According to this concept, the structural similarity between a magnetically ordered overlay and a TI substrate”
• Colloquium : Quantum anomalous Hall effect (2022, background): “B. the intralayer ferromagnetism (interlayer antiferromagnetism) is induced by ferromagnetic superexchange (antiferromagnetic super-superexchange), and captured by DFT calculations (Li et al., 2019b; Otrokov et al., 2017; Zhang et al., 2019a).”
• High-temperature quantum anomalous Hall regime in a MnBi2Te4/Bi2Te3 superlattice (2020, background): “[30] Otrokov, M.”
• Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials (2018, background): “Note that monolayer MnBi2Te4 was introduced as an FM insulator to break the TRS of a TI surface to realize the QAH and topological magnetoelectric effects in the magnetic topological heterostructures (30, 31).”