10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications

By M. Das, C. Capell, D. Grider, S. Leslie, J. Ostop, R. Raju, M. Schutten, J. Nasadoski, A. Hefner. 2011 IEEE Energy Conversion Congress and Exposition, 2011

211 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/180dca85dddef557cbd95eaf35bdc75972162bda

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In Electrical and Electronic Engineering

Citations in the corpus

Power Semiconductor Devices for Smart Grid and Renewable Energy Systems (2017, methodology): “The 15-kV SiC MOSFETs have been prototyped and used in developing high-voltage high-frequency solid state transformers [97]–[98], [166]–[168] that take advantage of the fast switching speed of the device even at such a voltage level.”
Power Electronic Traction Transformer-Low Voltage Prototype (2013, methodology): “Similarly in the work presented in [30] 10 kV SiC MOSFET modules have been developed and tested, while”
Evolving and Emerging Applications of Power Electronics in Systems (2013, background): “Size is reduced by 50% and weight by 75% relative to a conventional 60 Hz transformer [39].”
Applicability of Solid-State Transformers in Today’s and Future Distribution Grids (2019, methodology): “Furthermore, a 1 MVA matrix-type direct AC-AC SST using latest 15 kV SiC technology achieves a peak efficiency of around 97 % [27].”
Power Electronic Traction Transformer—Medium Voltage Prototype (2014, unknown): “The type of used semiconductors plays an important role, and often, an optimization is needed to bring the properties of these devices beyond commercially available devices, as shown for the IGBT [17], [18], [39] or for the SiC devices in [26].”