Quantifying ion-induced defects and Raman relaxation length in graphene

By M. Lucchese, F. Stavale, E. Ferreira, C. Vilani, M. Moutinho, Rodrigo B. Capaz, Carlos A. Achete, A. Jorio. 2010

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Visualization of defect densities in reduced graphene oxide (2012, methodology): “[13] Lucchese MM, Stavale F, Ferreira EHM, Vilani C, Moutinho MVO, Capaz RB, et al.”
Spectroscopic investigation of defects in two-dimensional materials (2016, background): “Raman spectroscopy can also be used to quantify the amount of defects in graphene [95, 103].”
Structural defects in graphene. (2011, methodology): “Another physical method which has been used for defect production in graphene is ion irradiation.(18,88) 91 It can be used to selectively produce certain defects (typically vacancies)(92) or to pattern and cut graphene with a precision down to 10 nm utilizing a focused ion beam (FIB).”
Defect characterization in graphene and carbon nanotubes using Raman spectroscopy (2010, methodology): “…the impact points for the ions chosen at random, combined with equation (3.1) and using the parameters CA = 4.56, CS = 0.86, rA = 3 nm and rS = 1 nm, give the full line curve in figure 3b, which is in excellent agreement with the experimental results (points) in this figure (Lucchese et al. 2010).”
Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition (2013, neutral): “induced D-band to the graphitic G-band [280-285].”