High performance n-channel organic field-effect transistors and ring oscillators based on C60 fullerene films
By T. Anthopoulos, Birendra Singh, N. Marjanović, Niyazi Serdar Sariciftci, A. M. Ramil, H. Sitter, M. Cölle, Dago M. De Leeuw. 2006
237 citations recorded by the source corpus.
We report on organic n-channel field-effect transistors and circuits based on C60 films grown by hot wall epitaxy. Electron mobility is found to be dependent strongly on the substrate temperature during film growth and on the type of the gate dielectric employed. Top-contact transistors employing LiF∕Al electrodes and a polymer dielectric exhibit maximum electron mobility of 6cm2∕Vs. When the same films are employed in bottom-contact transistors, using SiO2 as gate dielectric, mobility is reduced to 0.2cm2∕Vs. By integrating several transistors we are able to fabricate high performance unipolar (n-channel) ring oscillators with stage delay of 2.3μs.
Subfields: Electrical and Electronic Engineering, Organic Chemistry
View Paper: https://www.semanticscholar.org/paper/1735dc1c47cec17018a8e75fbccd41bba7d77c0b
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In Electrical and Electronic Engineering
In Organic Chemistry
Citations in the corpus
- Recent Advances in Organic Solar Cells (2007, background): “1 cm2V−1s−1 reaching higher values only in particular TFT structures using highly crystalline small molecules [25, 26] (silicon: μe = 1400 cm2V−1s−1).”