Analysis of pentacene field effect transistor as a Maxwell-Wagner effect element

By R. Tamura, E. Lim, T. Manaka, M. Iwamoto. 2006

202 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/170852d44ab5d2d25a41b04c223fa8b5c9f6ebe9

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In Electrical and Electronic Engineering

1. Z. Dang
2. Shengtao Li

Citations in the corpus

• Polypropylene/carbon nanotube nano/microcellular structures with high dielectric permittivity, low dielectric loss, and low percolation threshold (2014, methodology): “According to the Maxwell Wagner Sillars (MWS) effect [58,59], when a current flows across”
• Direct imaging of carrier motion in organic transistors by optical second-harmonic generation (2007, methodology): “More specifically, it can demonstrate the appropriateness of an analytical model for OFETs, such as a Maxwell–Wagner effect elemen”
• Fundamentals, processes and applications of high-permittivity polymer–matrix composites (2012, background): “6 MPa, and heating and cooling rates greater than 10(9) K/s [230].”