RF MEMS: Theory, Design and Technology

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Comb-based radiofrequency photonic filters with rapid tunability and high selectivity (2011, background): “The fundamental tuning speed of RF MEMS devices is characterized in [24] as limited to approximately 1-300 μs.”
Selecting metal alloy electric contact materials for MEMS switches (2004, background): “The most notable are rhenium (Re), ruthenium (Ru), rhodium (Rh), iridium (Ir), copper (Cu) and cobalt (Co) [8].”
Tuning in to RF MEMS (2009, background): “If the dc biasing electrode is separated from the RF signal path, the RF MEMS switched capacitor shows even better linearity and higher IIP3 compared to the standard design, but this is not considered here so as to have a fair comparison with the BST and GaAs devices [1].”
Memory effects in complex materials and nanoscale systems (2010, methodology): “Such elements are key components in many radio-frequency (RF) applications such as tunable filters, impedance matching circuits and voltage-controlled oscillators (Rebeiz, 2002; Varadan et al., 2002).”
Pull-in and snap-through instabilities in transient deformations of microelectromechanical systems (2009, methodology): “Microelectromechanical systems (MEMS) having components of dimensions in the range of a few to a hundred micrometers are used as radio frequency (RF) switches, varactors and inductors [1], accelerometers [2], pressure sensors, controllers for micro-mirrors [3], micropumps [4] and bio-MEMS [5].”