Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

By C. Pai, Luqiao Liu, Y. Li, H. Tseng, D. Ralph, Robert A. Buhrman. 2012

1,317 citations recorded by the source corpus.

We report a giant spin Hall effect in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip, we determine the spin Hall angle to be |θSHβ-W|=0.30±0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices, we independently determine |θSHβ-W|=0.33±0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.

Subfields: Atomic and Molecular Physics, and Optics

View Paper: https://www.semanticscholar.org/paper/1672c29faae2bcf5e02e9d8523f07a5627670136

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In Atomic and Molecular Physics, and Optics

  1. Pietro Gambardella
  2. Axel Hoffmann
  3. J. Sinova
  4. T. Jungwirth
  5. A. Manchon
  6. M. Chshiev
  7. Bernard Dieny
  8. I. Miron

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