Half integer quantum Hall effect in high mobility single layer epitaxial graphene

By Xiaosong Wu, Yike Hu, M. Ruan, N. K. Madiomanana, J. Hankinson, M. Sprinkle, C. Berger, W. D. Heer. 2009

152 citations recorded by the source corpus.

The quantum Hall effect, with a Berry’s phase of π is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is ∼20 000 cm2/V⋅s at 4 K and 15 000 cm2/V⋅s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/163ff48a496ed7e42e69b6f0e67ec048cdff68f9

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Production and processing of graphene and related materials (2020, background): “SLG protection is therefore required (top layer, or measurement in neutral or vacuum environment), unless the exposure provides useful counter doping (like for the measurement of the quantum Hall effect [625]).”
Colloquium: The transport properties of graphene: An introduction (2010, background): “Also, the quantum Hall effect in graphene has been observed at room temperature (Novoselov et al., 2007) and recently in epitaxial graphene as well (Wu et al., 2009), which can be produced in quasi-free standing form (Riedl et al., 2009).”
Electronic properties of graphene in a strong magnetic field (2010, background): “More recently, the RQHE has been observed also in epitaxial graphene with moderate mobilities (Jobst et al., 2010; Shen et al., 2009; Wu et al., 2009). c. Experimental observation of relativistic Landau levels.”