Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications
By M. Biercuk, D. Monsma, Charles M. Marcus, J. Becker, R. Gordon. 2003
179 citations recorded by the source corpus.
We report a method for depositing patterned dielectric layers with submicron features using atomic layer deposition. The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and minimum feature size. Films were deposited at 100–150 °C using several different precursors and patterned using either electron-beam or photoresist. The low deposition temperature permits uniform film growth without significant outgassing or hardbaking of resist layers. A lift-off technique presented here gives sharp step edges with edge roughness as low as ∼10 nm. We also measure dielectric constants (κ) and breakdown fields for the high-κ materials aluminum oxide (κ∼8–9), hafnium oxide (κ∼16–19), and zirconium oxide (κ∼20–29), grown under similar low temperature conditions.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films
View Paper: https://www.semanticscholar.org/paper/162cf4c8e94edd94af6e2e3f154284e74f80ae6c
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Shape-memory polymers and their composites: Stimulus methods and applications (2011, methodology): “21, the laser-induced SMP has been demonstrated and subsequently considered for use as a medical device [221,222].”