Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry

By G. Jellison, V. Merkulov, A. Puretzky, D. Geohegan, G. Eres, D. Lowndes, J. Caughman. 2000

162 citations recorded by the source corpus.

Subfields: Computational Mechanics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/15eee313488b56ef80feb6995dd165ae743bf0a5

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Citations in the corpus

• Refractive index determination of SiO2 layer in the UV/Vis/NIR range: spectrophotometric reverse engineering on single and bi-layer designs (2013, methodology): “TLM, which has been widely used for many amorphous materials [19]–[21], was derived from the Tauc joint density of states.”