Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy
By D. Evans, A. G. McGlynn, B. Towlson, M. Gunn, D. Jones, T. Jenkins, R. Winter, N. Poolton. 2008
149 citations recorded by the source corpus.
Using synchrotron-based luminescence excitation spectroscopy in the energy range 4–20 eV at 8 K, the indirect Γ–X optical band-gap transition in cubic boron nitride is determined as 6.36 ± 0.03 eV, and the quasi-direct band-gap energy of hexagonal boron nitride is determined as 5.96 ± 0.04 eV. The composition and structure of the materials are self-consistently established by optically detected x-ray absorption spectroscopy, and both x-ray diffraction and Raman measurements on the same samples give independent confirmation of their chemical and structural purity: together, the results are therefore considered as providing definitive measurements of the optical band-gap energies of the two materials.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/15d2cae11e90e6730c902c874ca07992d770e42e
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In Materials Chemistry
Citations in the corpus
- Synthesis of Hexagonal Boron Nitride Monolayer: Control of Nucleation and Crystal Morphology (2015, result): “The optical band gap (OBG) estimated [36,37] from the UV-Vis spectrum of the h-BN is >5.85 eV, as shown in the inset in Figure 6d; it is close to the values reported else-where .”