Colossal negative magnetoresistance in dilute fluorinated graphene

By Xia Hong, S. Cheng, C. Herding, Jun Zhu. 2010

134 citations recorded by the source corpus.

Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual "staircase" field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. We discuss possible origins, considering quantum interference effects and adatom-induced magnetism in graphene.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1555626aa2b90207d3f481624ba63444f07101b8

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Spintronics and pseudospintronics in graphene and topological insulators. (2012, background): “Unfortunately, the coupling between these defects and graphene's π orbitals seems so far to be weak [88][89].”
Spin-half paramagnetism in graphene induced by point defects (2011, background): “and the Kondo effect and giant negative magnetoresistance in defected-graphene device”