Lande g Factors and Orbital Momentum Quenching in Semiconductor Quantum Dots
By C. Pryor, M. E. Flatté. 2004
146 citations recorded by the source corpus.
We show that electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that of paramagnetic atomic impurities and bulk semiconductors. Strain, dot geometry, and confinement energy modify the effective g factors, yet are insufficient to explain our results. We find that the dot's discrete energy spectrum quenches the orbital angular momentum, pushing the electron g factor towards 2, even when all the materials have negative bulk g factors. The approximate shape of a dot can be determined from measurements of the g factor asymmetry.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/14f2477a8df82a706015116942d4b4cc147e541c
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In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- Optical Properties of Semiconductor Quantum Dots (2008, background): “In the case of quantum dots it is often not easy [77] to calculate the g-factors: uncertainties in the shape and strain of a quantum dot can make it difficult to compare theoretical predictions and experimental data.”