First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

By N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. Arikado. 2005

158 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/14de5a7a185c990f78dc658c9fff4fe2eaf0ded9

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In Electrical and Electronic Engineering

1. Ya. I. Alivov
2. Hadis Morkoç
3. Natalia Izyumskaya

Citations in the corpus

• Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics (2009, background): “150 Consequently, N incorporation removes the electron leakage paths mediated by V O -related gap states by deactivating the V O -related gap states.”